| PART |
Description |
Maker |
| EPC-525-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-0 EPC-13.0-1.0-0 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.5-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-440-2.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.22-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-M25-1 |
Optical Monitoring Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KIP-107-1 |
1.25G InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KIP-M1M-1 KIP-M2M-1 KIP-M3M-1 |
Optical Monitoring Photodiode Chip for KIP-MxM
|
KODENSHI KOREA CORP.
|
| KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|
| S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Corporation
|
